Toshiba has developed a 3-bit-per-cell 128 gigabit (Gb) chip with the die size 170mm and write speed 18MB/s of any 3-bit-per-cell device.
Toshiba and its technology partner, SanDisk, have unveiled the key technology advances of the new 3-bit-per-cell 19nm generation device.
The new device meets the demands of NAND flash memories manufactures, which is higher densities at competitive costs.
The new 3-bit-per-cell 19nm generation device uses the three-step programming algorithm and air-gap technology for transistors, which reduces the coupling between memory cells down to 5% and achieves a write speed performance of 18MB/s.
In three-step writing technology, the new chip writes through rough distribution in the second step, and tightens as well-defined distribution at the third.
