The company said that it will feature a silicon-oxide-nitride-oxide-silicon (SONOS) like memory cell for fast write performance with high packing density and lower cost.
According to Spansion, the new architecture is based on the MirrorBit technology, which accounts for approximately 22% of the worldwide NOR Flash memory market. The company claims that the architecture will enhance its MirrorBit ORNAND portfolio with 45nm technology that requires 25% less mask layers than the 65nm MirrorBit ORNAND and is superior over the floating gate NAND solutions.
With our proprietary leading-edge MirrorBit technology, 300mm wafer capability and planned NAND-equivalent performance, we can further expand our product roadmap and accelerate our MirrorBit technology momentum, said Lou Parrillo, executive vice president at Spansion.
Toshiba, Spansion’s rival, introduced a three dimensional memory cell array structure for higher density NAND flash memory in June 2007. It has a SONOS structure and the technology can be introduced into production at the 32nm node.
Source: ComputerWire daily updates
