Fujitsu Semiconductor America (FSA) has introduced a new Ferroelectric Random Access Memory (FRAM) product series that features a voltage range of 3.0V to 5.5V, offering design flexibility for consumer and industrial applications.
FRAM is the new generation of nonvolatile memory that delivers memories like EEPROM and Flash, consumes less power and offers improved speed and endurance to multiple read-and-write operations.
The V series includes products ranging from 16kbit to 256kbit, covering both I2C and SPI interfaces.
The first two members of the series, the MB85RC16V and MB85RC64V feature I2C serial interfaces at an operating frequency of 400kHz, covering the densities of 16kbit and 64kbit, respectively.
The new series products feature an endurance of 1 trillion (10(12)) read/write cycles. All products of the new series are available in the 8-pin plastic SOP packages, which are compatible with most EEPROMs.
Fujitsu also offers a wide variety of low-voltage FRAM devices operating between 2.7 and 3.0V, which are equipped with I2C, SPI or parallel interfaces, whosedensity levels vary from 16kbit to 4Mbit.
Fujitsu Semiconductor America Marketing senior manager Tong Swan Pang said the Fujitsu V series FRAMs accommodate the common CMOS voltage range of 3.3V to 5V, while allowing +10% voltage swing tolerance.
"The wide voltage range of this new series enables system designers to consolidate their designs around a single FRAM for multiple platforms. The flexibility of the V series enhances logistical and operational efficiency, while driving component costs down," said Tong Swan Pang.