MoSys’ 1T-SRAM technology delivers a unique combination of density, performance, and power capabilities, and opens up exciting opportunities for developing innovative new IC products that meet the demanding performance and cost requirements of our markets, stated Richard Brown, Director of Marketing at VIA Technologies, Inc.
VIA’s innovations have contributed to the rapid pace of development in the semiconductor market noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc.
We are pleased to provide VIA with 1T-SRAM technology as they build the ICs supporting today’s high growth applications.
MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs whilst the innovative 1T-SRAM architecture allows the use of standard logic manufacturing processes without requiring any process changes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in discrete memories available from MoSys as well as in SoC products at MoSys’ licensees.
