HP has signed a joint development agreement with memory supplier Hynix Semiconductor, to bring the former’s new circuit element memristor, to market in future memory products.
Under the agreement, both companies will jointly develop new materials and process integration technology to transfer the memristor technology from research to commercial development in the form of Resistive Random Access Memory (ReRAM).
According to HP, ReRAM is a non-volatile memory with low power consumption that holds potential to replace flash memory and serve as a universal storage medium.
The company said that the memristors require less energy to operate, and are quicker than present solid-state storage technologies and can retain information even when power is off.
HP senior fellow Stan Williams said that this agreement brings together the company’s core intellectual property and a first-rate supplier with the capacity to bring this innovation to market in world-class memory on a mass scale.
"It is the most recent example of HP’s ability to drive product innovation from the Labs out into the commercial world. This is discovery and invention with clear purpose, which differentiates HP and reinforces the value of our research enterprise to HP as a whole," Williams said.
