NEC Corp claimed last week that it had developed the world’s first basic technology for rewritable memory using Scanning Tunnelling Microscopy. The new technology is expected to have application as a Nano-fabrication Tool employed in basic technical analysis, for observation and modification of the surface morphology of ultra large-scale integrated circuits. Using the new technique, 10 nanometer bit erase-and-write was achieved, with ultra-high recording density at relatively high speed, making possible the manufacturing of Tera-bit class memories measuring one square inch, at room temperature and atmospheric pressure. The technology has applications in ultra-fine integrated circuits, high-density disks and other memory devices, according to the company.
